3D Topography Mask Aligner Lithography Simulation

Lithography simulation enables the ability to transfer the benefits of mask aligners beyond the classical limits by resolution enhancement techniques such as layout optimization (OPC), source shaping, advanced mask technologies (grey-tone, phase shift), or combinations thereof such as source-mask-optimization. The combination with the SUSS MO Exposure Optics opens new opportunities for next generation products for 3D packaging, flat panel display and MEMS products, particularly through the integration of the 3D topography simulation that is capable of computing larger areas, thick layers, and high-topography in reasonable time using off-the-shelf PCs.